| PART |
Description |
Maker |
| 2SD1611 |
High forward current transfer ratio hFE High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
| 2SD2528 |
Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)
|
Panasonic Semiconductor
|
| 2SC5954 2SC5954P 2SC5954Q |
Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio
|
PANASONIC[Panasonic Semiconductor]
|
| 2SD2375 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)
|
PANASONIC[Panasonic Semiconductor]
|
| MN103SE5 MN103SFE5P |
32-bit High Performance Microcomputers MN103S Series
Transfer mode: Word transfer. Burst transfer. Intermittent transfer
|
Panasonic Semiconductor
|
| MN103SD0Q MN103SFD0R |
Transfer mode: Word transfer. Burst transfer. Intermittent transfer
|
Panasonic Semiconductor
|
| KB354NT |
High current transfer ratio
|
Kingbright Corporation
|
| KB354NT |
High current transfer ratio.
|
Kingbright Corporation
|
| GBJ30B GBJ30G |
Low forward voltage, high forward current
|
GeneSiC Semiconductor, ...
|
| 2SD601A |
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| SR130 SR140 SR160 SR120 SR150 |
High surge current capability High current capability Low forward voltage drop
|
First Components International
First Components Intern...
|
